Jungil Lee, Byung-Yong Yu, Chul Ho Lee, Gyu-Chul Yi, Seung Hun Son, Gyu-Tae Kim, Gerard Ghibaudo, "Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure". Physica E: Low-dimensional Systems and Nanostructures 2008, 40 (6), 2147-2149. >> Published 2008-04-01
Abstract
We report the results of low-frequency noise characterizations of back-gate n-channel ZnO nanorod field-effect transistor (FET)
structure at room temperature. The noise in source–drain current was measured at zero gate bias and different source–drain biases. The
power spectral density of noise current showed, in general, 1/f behavior with some variations. The power index of current dependence of
the noise density at 10 Hz was about 1.5. The Hooge parameter obtained from the noise density at 10 Hz was comparable to or smaller
than carbon nanotube transistors and much higher than those of silicon nanowires and conventional silicon transistors, indicating that
special attention should be addressed to low-frequency noise in device applications. Possible noise sources are discussed with different
models. | |
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