Fabrication and Characterization of a Nano-Device with V2O5 Nanowires
Author(s): Min MR (Min, Mi Ra), Kim JH (Kim, Jae-Hoon), Kim EK (Kim, Eun Kyu), Kim YK (Kim, Yong-Kwan), Ha JS (Ha, Jeong Sook), Kim GT (Kim, Gyu Tae)
Source: JOURNAL OF THE KOREAN PHYSICAL SOCIETY 50 (6): 1819-1822 Sp. Iss. SI, JUN 2007
We fabricated nano-devices with V2O5 nanowires synthesized by using the gel/sol method,
and we measured their electrical properties. For a metal-insulator-semiconductor (MIS) structure
with V2O5 nanowires on p-type Si substrates, HfO2 dielectrics and Au gate were deposited on
the V2O5 nanowires. The electrical properties of this MIS diode were characterized by using
capacitance-voltage (C-V) measurements, and the typical C-V hystersis with a °at-band voltage
gap of about 3.5 V appeared at room temperature. Also, for an electron tunneling device via
nanowires, Au nano-electrodes with a 30 nm gap were fabricated on a SiO2/Si substrate by using
electron-beam lithography. This device with V2O5 nanowires inserted into nano-gap electrodes
showed an apparent electron tunneling behavior. These electrical properties imply that the use of
V2O5 nanowires for memory and tunneling devices may be feasible.
PACS numbers: 73.61.Tm, 73.40.Qv
Keywords: Nanowires, V2O5, Metal-insulator-semiconductor, Tunneling device |
