Xin Xu, Alexis Potie, Rudeesun Songmuang, Jae Woo Lee, Bogdan Bercu, Thierry Baron, Bassem Salem, Laurent Montes, "An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires". Nanotechnology 2011, 22 (10). >> Published 2011-02-02
Abstract
We present an improved atomic force microscopy (AFM) method to study the piezoelectric properties of nanostructures. An AFM tip is used to deform a free-standing piezoelectric nanowire. The deflection of the nanowire induces an electric potential via the piezoelectric effect, which is measured by the AFM coating tip. During the manipulation, the applied force, the forcing location and the nanowire's deflection are precisely known and under strict control. We show the measurements carried out on intrinsic GaN and n-doped GaN–AlN–GaN nanowires by using our method. The measured electric potential, as high as 200 mV for n-doped GaN–AlN–GaN nanowire and 150 mV for intrinsic GaN nanowire, have been obtained, these values are higher than theoretical calculations. Our investigation method is exceptionally useful to thoroughly examine and completely understand the piezoelectric phenomena of nanostructures. Our experimental observations intuitively reveal the great potential of piezoelectric nanostructures for converting mechanical energy into electricity. The piezoelectric properties of nanostructures, which are demonstrated in detail in this paper, represent a promising approach to fabricating cost-effective nano-generators and highly sensitive self-powered NEMS sensors.
Link : http://iopscience.iop.org/0957-4484/22/10/105704
http://iopscience.iop.org/0957-4484/22/10/105704/pdf/0957-4484_22_10_105704.pdf
email : xu.xin.letterbox@gmail.com and montes@minatec.inpg.fr
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An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires
Nanotechnology Volume 22, Number 10
Xin Xu1, Alexis Potie1,2, Rudeesun Songmuang3, Jae Woo Lee1,4, Bogdan Bercu1, Thierry Baron2, Bassem Salem2 and Laurent Montes1
1 IMEP-LAHC, Grenoble Institute of Technology, MINATEC, BP 257, 3 parvis Louis NEEL 38016 Grenoble, France
2 LTM-CNRS-UJF-Grenoble/Leti-Minatec, 17 rue des Martyrs, 38054 Grenoble, France
3 CEA-CNRS Group Nanophysics and Semiconductors, Institute Neel, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
4 School of Electrical Engineering, Korea University, Seoul 136-701, Korea
2011년 2월 2일에 나온 논문입니다.
GaN 나노선과 GaN/AlN/GaN 이종접합 나노선과의 피에조효과 측정 및 비교분석 실험에 대한 논문입니다.
프랑스에서 만난 중국인 친구가 AFM 팁을 이용해서 전압을 측정하는 실험 set-up을 도와주게 된 것을 인연으로 논문까지 오게 되었습니다.
순수하게 도움을 준 것이 논문 출간까지 도달한 좋은 경험이었습니다. |
