DaeIl Kim, Yong-Kwan Kim, Sung Chan Park, Jeong Sook Ha, Junghwan Huh, Junhong Na, Gyu-Tae Kim, "Photoconductance of aligned SnO[sub 2] nanowire field effect transistors". Applied Physics Letters 2009, 95 (4), 043107. >> Published 2009-07-27
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Photoconductance of aligned SnO2 nanowire field effect transistors
DaeIl Kim, Yong-Kwan Kim, Sung Chan Park, Jeong Sook Ha, Junghwan Huh, Junhong Na and Gyu-Tae Kim
APPLIED PHYSICS LETTERS 95, 043107 (2009)
Abstract
We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect
transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition.
Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the
channels. UV photosensitivity of ~10^7 at the gate voltage Vg=−40 V was obtained due to a small
dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster
for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as
polarized UV detectors with a high sensitivity
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