Un Jeong Kim, Kang Hyun Kim, Kyu Tae Kim, Yo-Sep Min, Wanjun Park, "Noise characteristics of single-walled carbon nanotube network transistors". Nanotechnology 2008, 19 (28), 285705. >> Published 2008-06-03
Abstract
The noise characteristics of randomly networked single-walled carbon nanotubes grown
directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect
transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area
and the large number of tube–tube/tube–metal junctions, the inverse frequency, 1/f ,
dependence of the noise shows a similar level to that of a single single-walled carbon nanotube
transistor. Detailed analysis is performed with the parameters of number of mobile carriers and
mobility in the different environment. This shows that the change in the number of mobile
carriers resulting in the mobility change due to adsorption and desorption of gas molecules
(mostly oxygen molecules) to the tube surface is a key factor in the 1/ f noise level for carbon
nanotube network transistors. | |
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