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제목[160-2020] Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET2020-12-11 18:20
작성자

논문 제목: Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET


Journal: Nanotechnology

Author(s): Kookjin Lee1Yeonsu Kim2Hyebin Lee3So Jeong Park2 Yongwoo Lee4 Minkyu Joo5 Hyunjin Ji6 Jaewoo Lee2Jungu Chun3Moonsoo Sung7Young-Hoon Cho3Doyoon Kim8Junhee Choi9Jae Woo Lee10 Daeyoung Jeon11 Sung-Jin Choi12and Gyu-Tae Kim13

DOI: https://doi.org/10.1088/1361-6528/abd278


사사: GAA

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