Jae Woo Lee, Doyoung Jang, Gyu Tae Kim, Mireille Mouis, Gerard Ghibaudo, "Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors". Journal of Applied Physics 2010, 107 (4). >> Published 2010-02-16
Abstract :
This paper discusses the limit of the sensitivity that can be given to the design of nanowire sensors when the low frequency (LF) noise, due to trapping-detrapping at the nanowire surface, is taken into account. The sensitivity is calculated as the relative conductance variation per unit of external charge density. The LF noise is shown to limit the minimum detectable charge density. Our modeling approach shows how the performance can be optimized by tuning the channel length and the width, and the doping concentration. The implications of these developments are outlined as useful features for the design and the optimization of silicon nanowire sensors.
Link : http://link.aip.org/link/?JAP/107/044501
http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000107000004044501000001&idtype=cvips&doi=10.1063/1.3294961&prog=normal
email : orion627@hanmail.net
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Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors
Jae Woo Lee, Doyoung Jang, Gyu Tae Kim, Mireille Mouis, and Gerard Ghibaudo
J. Appl. Phys. 107, 044501 (2010); doi:10.1063/1.3294961
Received 16 November 2009; accepted 22 December 2009; published 16 February 2010
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저와 도영이형이 공동학위로 프랑스에 나와 있으면서 진행하게된 Si 나노선 센서 시뮬레이션이 논문으로 나오게 되었습니다.
먼 미국에서 어려운 상황임에도 지도해주신 교수님께 감사드리며, 프랑스에서 지도해주시는 제라드 기보도박사님과 밀레교수님께도 감사의 말씀을 드립니다.
앞으로 더욱 열심히 하겠습니다. |
