Soo-Han Choi, Seong-Min Yee, Hyun-Jin Ji, Jae-Wan Choi, Young-Seung Cho, Gyu-Tae Kim, "Smart Gas Sensor and Noise Properties of Single ZnO Nanowire". Japanese Journal of Applied Physics 2009, 48 (6), 06FD13. >> Published 2009-06-22
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저널명 : Japanese Journal of Applied Physics 48 (2009) 06FD13
제목 : Smart Gas Sensor and Noise Properties of Single ZnO Nanowire
저자 : Soo-Han Choi1;3, Seong-Min Yee3, Hyun-Jin Ji3, Jae-Wan Choi3, Young-Seung Cho2;3, and Gyu-Tae Kim3
저자 소속 :
1 CAE Team, Semiconductor R&D Center, Samsung Electronics, San #16, Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
2 Technology Development Team, Semiconductor R&D Center, Samsung Electronics,
San #16, Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
3 School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
Received October 21, 2008; accepted January 16, 2009; published online June 22, 2009
초록 :
A new zinc oxide nanowire (NW) gas sensor based on the commercially available 0.35 mm complementary metal–oxide–semiconductor
(CMOS) process is developed. The smart gas sensor consists of a gas-sensing resistor and an interface circuit for resistance
measurement. The single ZnO NW synthesized by the vapor–liquid–solid (VLS) process is utilized as the gas-sensing resistor. The
interface circuit for the resistance measurement of the single ZnO NW is composed of a ring oscillator circuit, in which the oscillation period
is optimized with regards to the ZnO NW resistance and external capacitance to accurately detect the resistance of the ZnO NW after
exposure to the gas. Because the low-frequency noise contains information about the charge fluctuations which are important for
determining the gas-sensing reliability, the low-frequency noise of the single ZnO NW at various gate voltages, source–drain voltages and
resistances is systematically characterized and compared with those of CMOS field-effect transistors (FETs) and network carbon
nanotubes (CNTs) resistor. # 2009 The Japan Society of Applied Physics |
